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MAX3272 Просмотр технического описания (PDF) - Maxim Integrated

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MAX3272 Datasheet PDF : 14 Pages
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+3.3V, 2.5Gbps Low-Power
Limiting Amplifiers
Interface Schematics
VCC
VCC
0.25pF
IN+
IN-
0.25pF
ESD
STRUCTURES
540
540
110
8k
LOS
GND
Figure 4a. LOS Output Circuit for MAX3272
VCC
ESD
STRUCTURE
GND
Figure 3. Input Circuit
Two control voltages VASSERT, and VDEASSERT, define
the LOS assert and deassert levels. To prevent LOS
chatter in the region of the programmed threshold,
approximately 3.3dB of hysteresis is built into the LOS
assert/deassert function. Once asserted, LOS is not
deasserted until the input amplitude rises to the
required level (VDEASSERT).
To facilitate interfacing with +5V modules, the LOS and
LOS pins on the MAX3272 do not have internal ESD
protection. If ESD protection is desired, a low-capaci-
tance Schottky diode or diode array structure, such as
the MAX3202E, is recommended (see the Typical
Operating Circuits).
The LOS and LOS pins on the MAX3272A include ESD
protection and, as a result, cannot be interfaced with
+5V modules.
Gain Stage
The high-bandwidth gain stage provides approximately
42dB of gain.
8k
LOS
ESD
STRUCTURE
GND
Figure 4b. LOS Output Circuit for MAX3272A
Offset-Correction Loop
Due to the high gain of the amplifier, the MAX3272/
MAX3272A are susceptible to DC offsets in the signal
path. In communications systems using NRZ data with
a 50% duty cycle, pulse-width distortion present in the
signal or generated by the transimpedance amplifier
appears as input offset and is removed by the offset-
cancellation loop. An external capacitor is required
between CAZ1 and CAZ2 to decouple the offset-can-
cellation loop and determine the lower 3dB frequency
of the signal path.
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