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MAC12SM Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталоге
Компоненты Описание
производитель
MAC12SM
ONSEMI
ON Semiconductor ONSEMI
MAC12SM Datasheet PDF : 5 Pages
1 2 3 4 5
MAC12SM, MAC12SN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
Symbol
RqJC
RqJA
TL
Value
2.2
62.5
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
ON CHARACTERISTICS
TJ = 25°C
TJ = 110°C
IDRM,
IRRM
mA
− 0.01
2.0
Peak On-State Voltage (Note 2)
(ITM = ± 17 A)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
VTM
− 1.85
V
IGT
mA
1.5 5.0
2.5 5.0
2.7 5.0
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±200 mA)
Latching Current (VD = 12 V, IG = 5 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IH
2.5 10
mA
IL
mA
3.0 15
5.0 20
3.0 15
VGT
V
0.45 0.68 1.5
0.45 0.62 1.5
0.45 0.67 1.5
DYNAMIC CHARACTERISTICS
Critical Rate of Change of Commutating Current
(VD = 400 V, ITM = 3.5 A, Commutating dV/dt = 10 V/ms, Gate Open, TJ = 110°C,
f = 500 Hz, Snubber: Cs = 0.01 mf, Rs = 15 W)
(di/dt)c
8.0 10
A/ms
Critical Rate of Rise of Off-State Voltage
(VD = 67% VDRM, Exponential Waveform, RGK = 1 KW, TJ = 110°C)
dV/dt
15
40
V/ms
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40 msec; diG/dt = 1 A/msec; Igt = 100 mA; f = 60 Hz
di/dt
10 A/ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
Symbol
VDRM
IDRM
VRRM
IRRM
VTM
IH
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
IRRM at VRRM
on state
IH
Quadrant 3
MainTerminal 2 −
VTM
VTM
IH
off state
Quadrant 1
MainTerminal 2 +
+ Voltage
IDRM at VDRM
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