M48T212A-85MH1 Просмотр технического описания (PDF) - STMicroelectronics
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M48T212A-85MH1 Datasheet PDF : 20 Pages
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M48T212A
Table 2. Absolute Maximum Ratings (1)
Symbol
Parameter
Value
Unit
TA
Ambient Operating Temperature
0 to 70
°C
TSTG
Storage Temperature (VCC Off, Oscillator Off)
–55 to 125
°C
TSLD (2)
Lead Solder Temperature for 10 sec
260
°C
VIO
Input or Output Voltages
–0.3 to 4.6
V
VCC
Supply Voltage
–0.3 to 4.6
V
IO
Output Current
20
mA
PD
Power Dissipation
1
W
Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational section
of this specification is not implied. Exposure to the absolute maximum rating conditions for extended periods of time may affect
reliability.
2. Soldering temperature not to exceed 260°C for 10 seconds (total thermal budget not to exceed 150°C for longer than 30 seconds).
CAUTION: Negative undershoots below –0.3V are not allowed on any pin while in the Battery Back-up mode.
Table 3. Operating Modes (1)
Mode
VCC
E
G
Deselect
VIH
X
Write
Read
3.0V to 3.6V
VIL
X
VIL
VIL
Read
VIL
VIH
Deselect
VSO to VPFD (min) (2)
X
X
Deselect
≤ VSO (2)
X
X
Note: 1. X = VIH or VIL.
2. VSO = Battery Back-up Switchover Voltage. (See Table 7 for details).
W
DQ7-DQ0
Power
X
High-Z
Standby
VIL
DIN
VIH
DOUT
Active
Active
VIH
High-Z
Active
X
High-Z
CMOS Standby
X
High-Z
Battery Back-Up
Table 4. Truth Table for SRAM Bank Select (1)
Mode
VCC
EX
A
Select
3.0V to 3.6V
Low
Low
Low
High
Deselect
High
X
Deselect
VSO to VPFD (min) (2)
X
X
Deselect
≤ VSO (2)
X
X
Note: 1. X = VIH or VIL.
2. VSO = Battery Back-up Switchover Voltage. (See Table 7 for details).
E1CON
Low
High
High
High
High
E2CON
High
Low
High
High
High
Power
Active
Active
Standby
CMOS Standby
Battery Back-Up
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