KMZ50 Просмотр технического описания (PDF) - Philips Electronics
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KMZ50 Datasheet PDF : 8 Pages
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Philips Semiconductors
Magnetic field sensor
Preliminary specification
KMZ50
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VCC
bridge supply voltage
Hy
operating range in sensitive
direction
Hx
operating range perpendicular to
sensitive direction
S
sensitivity
open circuit
TCVO
temperature coefficient of
output voltage
Rbridge
bridge resistance
TCRbridge temperature coefficient of
bridge resistance
Voffset
TCVoffset
offset voltage
temperature coefficient of offset
voltage
VCC = 5 V;
Tamb = −25 to +125 °C
ICC = 3 mA;
Tamb = −25 to +125 °C
resistance pins 2 to 3
Tbridge = −25 to +125 °C
Tbridge = −25 to +125 °C
FH
hysteresis of output voltage
Rflip
resistance of set/reset conductor resistance pins 1 to 8
Iflip
recommended flipping current current pins 1 to 8
for stable operation
tflip
flip pulse duration
Risol
isolating resistance
resistance pins 1 to 2,
1 to 4, 2 to 4
Visol
voltage between isolated
systems
voltage pins 1 to 2, 1 to 4,
2 to 4
f
operating frequency
MIN.
−
−0.2
−0.2
12
−
−
1
−
−1.5
−3
−
1
±800
1
1
−
0
TYP.
5
−
−
16
−0.4
−0.1
−
0.3
−
−
−
3
±1 000
3
−
−
−
MAX.
8
+0.2
UNIT
V
kA/m
+0.2
kA/m
−
m-k---A--V----⁄--⁄-m-V--
−
%/K
−
%/K
3
kΩ
−
%/K
+1.5
+3
2
5
±1200
mV/V
µ----V--K----⁄--V---
%FS
Ω
mA
100
µs
−
MΩ
50
V
1
MHz
1998 Mar 24
4
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