KM41C4000D Просмотр технического описания (PDF) - Samsung
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KM41C4000D Datasheet PDF : 20 Pages
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KM41C4000D, KM41V4000D
CMOS DRAM
TEST MODE CYCLE
Parameter
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
RAS pulse width
CAS pulse width
RAS hold time
CAS hold time
Column Address to RAS lead time
CAS to W delay time
RAS to W delay time
Column Address to W delay time
Fast Page mode cycle time
Fast Page mode read-modify-write cycle
RAS pulse width (Fast Page cycle)
Access time from CAS precharge
Note) *1 : 5V only
Symbol
tRC
tRWC
tRAC
tCAC
tAA
tRAS
tCAS
tRSH
tCSH
tRAL
tCWD
tRWD
tAWD
tPC
tPRWC
tRASP
tCPA
-5*1
Min Max
95
113
55
18
30
55
10K
18
10K
18
55
30
18
55
30
40
58
55 200K
35
-6
Min Max
115
135
65
20
35
65
10K
20
10K
20
65
35
20
65
35
45
65
65 200K
40
-7
Min Max
135
160
75
25
40
75
10K
25
10K
25
75
40
25
75
40
50
75
75
200K
45
( Note 11 )
Units Notes
ns
ns
ns 3,4,10
ns
3,4,5
ns
3,10
ns
ns
ns
ns
ns
ns
7
ns
7
ns
7
ns
ns
ns
ns
3
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