KM41C4000D Просмотр технического описания (PDF) - Samsung
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KM41C4000D Datasheet PDF : 20 Pages
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KM41C4000D, KM41V4000D
CMOS DRAM
CAPACITANCE (TA=25°C, VCC=5V or 3.3V, f=1MHz)
Parameter
Symbol
Min
Input capacitance [D]
CIN1
-
Input capacitance [A0 ~ A10]
CIN2
-
Input capacitance [RAS, CAS, W]
CIN3
-
Output capacitance [Q]
COUT
-
AC CHARACTERISTICS (0°C≤TA≤70°C, See note 1,2)
Test condition (5V device) : VCC=5.0V±10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V
Test condition (3.3V device) : VCC=3.3V±0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-5*1
Min Max
-6
Min Max
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
Output buffer turn-off delay
Transition time (rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
tRC
tRWC
tRAC
tCAC
tAA
tCLZ
tOFF
tT
tRP
tRAS
tRSH
tCSH
tCAS
tRCD
tRAD
tCRP
tASR
tRAH
90
110
110
130
50
60
15
15
25
30
0
0
0
12
0
12
3
50
3
50
30
40
50
10K
60
10K
15
15
50
60
15
10K
15
10K
20
35
20
45
15
25
15
30
5
5
0
0
10
10
Column address set-up time
tASC
0
0
Column address hold time
tCAH
10
10
Column address to RAS lead time
tRAL
25
30
Read command set-up time
tRCS
0
0
Read command hold time referenced to CAS tRCH
0
0
Read command hold time referenced to RAS tRRH
0
0
Write command hold time
tWCH
10
10
Write command pulse width
tWP
10
10
Write command to RAS lead time
tRWL
15
15
Write command to CAS lead time
tCWL
13
15
Note) *1 : 5V only
Max
5
5
7
7
7
Min Max
130
150
70
20
35
0
0
17
3
50
50
70
10K
20
70
20
10K
20
50
15
35
5
0
10
0
15
35
0
0
0
15
15
15
15
Units
pF
pF
pF
pF
Units Notes
ns
ns
ns
3,4,10
ns
3,4,5
ns
3,10
ns
3
ns
6
ns
2
ns
ns
ns
ns
ns
ns
4
ns
10
ns
ns
ns
ns
ns
ns
ns
ns
8
ns
8
ns
ns
ns
ns
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