KM41C4000D Просмотр технического описания (PDF) - Samsung
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KM41C4000D Datasheet PDF : 20 Pages
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KM41C4000D, KM41V4000D
CMOS DRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
3.3V
5V
Units
Voltage on any pin relative to VSS
VIN,VOUT
-0.5 to +4.6
-1 to +7.0
V
Voltage on VCC supply relative to VSS
VCC
-0.5 to +4.6
-1 to +7.0
V
Storage Temperature
Tstg
-55 to +150
-55 to +150
°C
Power Dissipation
PD
600
600
mW
Short Circuit Output Current
IOS
50
50
mA
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70°C)
Parameter
3.3V
5V
Symbol
Min
Typ
Max
Min
Typ
Max
Supply Voltage
VCC
3.0
3.3
3.6
4.5
5.0
5.5
Ground
VSS
0
0
0
0
0
0
Input High Voltage
VIH
2.0
-
VCC+0.3*1
Input Low Voltage
VIL
-0.3*2
-
0.8
*1 : VCC +1.3V/15ns(3.3V), VCC +2.0V/20ns(5V), Pulse width is measured at VCC
*2 : - 1.3V/15ns(3.3V), - 2.0V/20ns(5V), Pulse width is measured at VSS
2.4
-0.1*2
-
VCC+1.0*1
-
0.8
Units
V
V
V
V
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)
Parameter
Input Leakage Current (Any input 0≤VIN≤VCC+0.3V,
all other input pins not under test=0 Volt)
Symbol
Min
II(L)
-5
Max
5
Units
uA
3.3V
Output Leakage Current
(Data out is disabled, 0V≤VOUT≤VCC)
IO(L)
-5
5
uA
Output High Voltage Level(IOH=-2mA)
VOH
2.4
-
V
Output Low Voltage Level(IOL=2mA)
VOL
-
0.4
V
Input Leakage Current (Any input 0≤VIN≤VCC+0.5V,
all other input pins not under test=0 Volt)
II(L)
-5
5
uA
Output Leakage Current
5V
(Data out is disabled, 0V≤VOUT≤VCC)
IO(L)
-5
5
uA
Output High Voltage Level(IOH=-5mA)
Output Low Voltage Level(IOL=4.2mA)
VOH
2.4
-
V
VOL
-
0.4
V
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