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KM4101IC8TR3 Просмотр технического описания (PDF) - Fairchild Semiconductor

Номер в каталоге
Компоненты Описание
производитель
KM4101IC8TR3
Fairchild
Fairchild Semiconductor Fairchild
KM4101IC8TR3 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
DATA SHEET
KM4100/KM4101
KM4100/KM4101 Electrical Characteristics (Vs = +2.7V, G = 2, RL = 2kto Vs/2; unless noted)
Parameters
Conditions
TYP
Min & Max UNITS NOTES
Case Temperature
+25°C
+25°C
Frequency Domain Response
-3dB bandwidth
G = +1, Vo = 0.05Vpp
215
G = +2, Vo = 0.2Vpp
85
full power bandwidth
G = +2, Vo = 2Vpp
36
gain bandwidth product
86
MHz
1
MHz
MHz
MHz
Time Domain Response
rise and fall time
settling time to 0.1%
overshoot
slew rate
0.2V step
1V step
0.2V step,
2.7V step, G = -1
1
3.7
ns
40
ns
9
%
140
V/µs
Distortion and Noise Response
2nd harmonic distortion
3rd harmonic distortion
THD
input voltage noise
input current noise
1Vpp, 5MHz
1Vpp, 5MHz
1Vpp, 5MHz
>1MHz
>1MHz
86
dBc
1
85
dBc
1
76
dB
1
16
nV/Hz
1.3
pA/Hz
DC Performance
input offset voltage
average drift
input bias current
average drift
input offset current
power supply rejection ratio
DC
open loop gain
quiescent current
quiescent current (disabled)
-1.6
±8
mV
2
10
µV/°C
3
±8
µA
2
7
nA/°C
0
±1
µA
2
57
52
dB
2
75
65
dB
2
3.9
5
mA
2
58
100
µA
2
Input Characteristics
input resistance
input capacitance
input common mode voltage range
common mode rejection ratio
Disable Characteristics (KM4101)
turn on time
turn off time
off isolation
Output Characteristics
output voltage swing
linear output current
short circuit output current
power supply operating range
DC, Vcm = 0V to Vs - 1.5
5MHz, RL = 100
RL = 10kto Vs/2
RL = 2kto Vs/2
RL = 150to Vs/2
-40°C to +85°C
4.3
1.5
-0.3 to 1.5
87
72
M
pF
V
dB
2
150
ns
25
ns
75
dB
0.023 to 2.66
V
0.025 to 2.653 0.1 to 2.6
V
2
0.065 to 2.55 0.3 to 2.325 V
2
±60
mA
±55
mA
±90
mA
2.7
2.5 to 5.5
V
Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels
are determined from tested parameters.
NOTES:
1) Rf = 1kwas used used for optimal performance. (For G = +1, Rf = 0)
2) 100% tested at +25°C.
Absolute Maximum Ratings
supply voltage
0 to +6V
maximum junction temperature
+175°C
storage temperature range
-65°C to +150°C
lead temperature (10 sec)
+300°C
operating temperature range (recommended) -40°C to +85°C
input voltage range
internal power dissipation
+Vs +0.5V; -Vs -0.5V
see power derating curves
Package Thermal Resistance
Package
5 lead SOT23
6 lead SOT23
8 lead SOIC
θJA
256°C/W
230°C/W
152°C/W
2
REV. 1A February 2001

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