IXFT18N100Q3 Просмотр технического описания (PDF) - IXYS CORPORATION
Номер в каталоге
Компоненты Описание
производитель
IXFT18N100Q3 Datasheet PDF : 5 Pages
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IXFT18N100Q3
IXFH18N100Q3
Fig. 7. Input Admittance
35
30
25
20
15
TJ = 125ºC
25ºC
10
- 40ºC
5
0
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
VGS - Volts
Fig. 9. Forward Voltage Drop of Intrinsic Diode
60
50
40
30
TJ = 125ºC
20
TJ = 25ºC
10
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
VSD - Volts
10,000
Fig. 11. Capacitance
Ciss
1,000
Fig. 8. Transconductance
40
TJ = - 40ºC
35
30
25
25ºC
20
125ºC
15
10
5
0
0
5
10
15
20
25
30
35
ID - Amperes
16
14
VDS = 500V
I D = 9A
12
I G = 10mA
Fig. 10. Gate Charge
10
8
6
4
2
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
100
RDS(on) Limit
10
25µs
100µs
Coss
100
f = 1 MHz
Crss
10
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1
TJ = 150ºC
TC = 25ºC
Single Pulse
0.1
10
100
VDS - Volts
1ms
1,000
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