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ISP815 Просмотр технического описания (PDF) - Isocom

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производитель
ISP815 Datasheet PDF : 3 Pages
1 2 3
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
50mA
6V
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Collector Current
Power Dissipation
35V
6V
80mA
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (VF)
1.2 1.4 V
IF = 20mA
Reverse Current (IR)
10 μA
VR = 4V
Output Collector-emitter Breakdown (BVCEO) 35
( Note 2 )
Emitter-collector Breakdown (BV ) 6
ECO
V
IC = 1mA
V
I = 100μA
E
Collector-emitter Dark Current (ICEO)
100 nA
VCE = 20V
Coupled Current Transfer Ratio (CTR) (Note 2) 600
7500 %
1mA IF , 2V VCE
Collector-emitter Saturation VoltageVCE (SAT)
1.0 V
20mA
IF
,
5mA
I
C
Input to Output Isolation Voltage V
5300
ISO
7500
V
RMS
See note 1
VPK
See note 1
Input-output Isolation Resistance RISO 5x1010
Ω
VIO = 500V (note 1)
Note 1
Note 2
Output Rise Time tr
Output Fall Time tf
60 300 μs
53 250 μs
V = 2V ,
CE
IC = 10mA, RL= 100Ω
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
27/11/08
DB92414

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