IS61NVVP25672-200 Просмотр технического описания (PDF) - Integrated Silicon Solution

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IS61NVVP25672-200

256K x 72 and 512K x 36, 18Mb PIPELINE 'NO WAIT' STATE BUS SRAM

Integrated Silicon Solution 

IS61NVVP25672

IS61NVVP51236

ISSI ®

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

Symbol Parameter

Test Conditions

-250

MAX

x36 x72

-200

MAX

x36 x72 Unit

ICC

AC Operating

Device Selected,

Com.

Supply Current

OE = VIH, ZZ ≤ VIL,

IND.

All Inputs ≤ 0.2V OR ≥ VCC – 0.2V,

Cycle Time ≥ tKC min.

450 500

500 550

400 450 mA

450 500

ISB

Standby Current Device Deselected,

COM.

TTL Input

VCC = Max.,

Ind.

All Inputs ≤ 0.2V OR ≥ VCC – 0.2V,

ZZ ≤ VIL, f = Max.

225 250

—

—

175 200 mA

200 230

ISBI

Standby Current Device Deselected,

Com.

CMOS Input

VCC = Max.,

Ind.

VIN ≤ GND + 0.2V or ≥ VCC – 0.2V

f=0

150 150

—

—

150 150 mA

200 200

Note:

1. MODE pin has an internal pullup and should be tied to Vcc or GND. It exhibits ±30 µA maximum leakage current when tied

to ≤ GND + 0.2V or ≥ Vcc – 0.2V.

CAPACITANCE(1,2)

Symbol Parameter

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 0V

6

pF

COUT

Input/Output Capacitance

VOUT = 0V

8

pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.3V.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

9

ADVANCED INFORMATION Rev. 00A

07/17/02

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