HUFA76639S3ST Просмотр технического описания (PDF) - Fairchild Semiconductor
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HUFA76639S3ST
Fairchild Semiconductor
HUFA76639S3ST Datasheet PDF : 10 Pages
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HUFA76639P3, HUFA76639S3S
Typical Performance Curves (Continued)
300
100
100µs
10 OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
1ms
TC = 25oC
1
SINGLE PULSE
TJ = MAX RATED
10ms
1
10
100
300
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
500
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
100
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.01
0.1
1
10
100
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
75
100
VGS = 10V
VGS = 5V
75
VGS = 4V
VGS = 3.5V
50
TJ = 175oC
25
TJ = 25oC
TJ = -55oC
0
1.5
2.0
2.5
3.0
3.5
4.0
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
50
VGS = 3V
25
0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
40
ID = 51A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
35
30
ID = 15A
25
ID = 35A
20
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.5
VGS = 10V, ID = 51A
2.0
1.5
1.0
0.5
-80
-40
0
40
80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2002 Fairchild Semiconductor Corporation
HUFA76639P3, HUFA76639S3S Rev. B
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