HUFA76445P3T Просмотр технического описания (PDF) - Fairchild Semiconductor
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HUFA76445P3T
Fairchild Semiconductor
HUFA76445P3T Datasheet PDF : 10 Pages
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HUFA76445P3, HUFA76445S3S
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
BV DSS
I DSS
I GSS
ID = 250µA, VGS = 0V (Figure 12)
ID = 250µA, VGS = 0V , TC = -40oC (Figure 12)
VDS = 55V, VGS = 0V
VDS = 50V, VGS = 0V, TC = 150oC
VGS = ±16V
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
V GS(TH)
r DS(ON)
VGS = VDS, ID = 250µA (Figure 11)
ID = 75A, VGS = 10V (Figures 9, 10)
ID = 75A, VGS = 5V (Figure 9)
ID = 75A, VGS = 4.5V (Figure 9)
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
RθJC
R θ JA
TO-220 and TO-263
SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time
t ON
Turn-On Delay Time
t d(ON)
Rise Time
tr
Turn-Off Delay Time
t d(OFF)
Fall Time
tf
Turn-Off Time
t OFF
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
t ON
Turn-On Delay Time
t d(ON)
Rise Time
tr
Turn-Off Delay Time
t d(OFF)
Fall Time
tf
Turn-Off Time
t OFF
GATE CHARGE SPECIFICATIONS
VDD = 30V, ID = 75A
VGS = 4.5V, RGS = 2.2Ω
(Figures 15, 21, 22)
VDD = 30V, ID = 75A
VGS = 10V,
RGS = 2.4Ω
(Figures 16, 21, 22)
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Q g(TOT)
Q g(5)
Q g(TH)
Q gs
Q gd
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 30V,
ID = 75A,
Ig(REF) = 1.0mA
(Figures 14, 19, 20)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 13)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
SYMBOL
VSD
Reverse Recovery Time
Reverse Recovered Charge
trr
QRR
TEST CONDITIONS
ISD = 75A
ISD = 35A
ISD = 75A, dISD/dt = 100A/µs
ISD = 75A, dISD/dt = 100A/µs
©2001 Fairchild Semiconductor Corporation
MIN TYP MAX UNITS
60
-
-
V
55
-
-
V
-
-
1
µA
-
-
250
µA
-
-
±100 nA
1
-
3
V
- 0.0054 0.0065 Ω
- 0.0063 0.0075 Ω
-
0.0066 0.008
Ω
-
-
0.48 oC/W
-
-
62
oC/W
-
-
515
ns
-
18
-
ns
-
325
-
ns
-
39
-
ns
-
135
-
ns
-
-
260
ns
-
-
205
ns
-
12
-
ns
-
126
-
ns
-
62
-
ns
-
135
-
ns
-
-
295
ns
-
124 150
nC
-
68
81
nC
-
5
6
nC
-
14
-
nC
-
30
-
nC
-
4965
-
pF
-
1250
-
pF
-
150
-
pF
MIN TYP MAX UNITS
-
-
1.25
V
-
-
1.00
V
-
-
100
ns
-
-
260
nC
HUFA76445P3, HUFA76445S3S Rev. A
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