HBF422 Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics

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производитель

HBF422

NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Microelectronics 

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HE6404

Issued Date : 1993.03.18

Revised Date : 2002.04.18

Page No. : 2/3

Current Gain & Collector Current

1000

hFE @ VCE=20V

125oC

Saturation Voltage & Collector Current

1000

VCE(sat) @ IC=10IB

100

25oC

75oC

125oC

75oC

25oC

10

100

0.1

1

10

100

0.1

1

10

100

Collector Current-IC (mA)

Collector Current-IC (mA)

Saturation Voltage & Collector Current

1000

25oC

75oC

125oC

VBE(sat) @ IC=10IB

100

0.1

1

10

100

Collector Current-IC (mA)

Cutoff Frequency & Collector Current

1000

100

VCE=10V

10

1

HBF422

10

100

Collector Current-IC (mA)

Capacitance & Reverse-Biased Voltage

100

10

Cob

1

0.1

1

10

100

1000

Reverse Biased Voltage (V)

10000

1000

Safe Operating Area

PT=100ms

PT=1ms

PT=1s

100

10

1

1

10

100

1000

Forward Biased Voltage-VCE (V)

HSMC Product Specification

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