GT28F400B3B150 Просмотр технического описания (PDF) - Intel
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GT28F400B3B150 Datasheet PDF : 49 Pages
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E
SMART 3 ADVANCED BOOT BLOCK–WORD-WIDE
Sym
Table 13. DC Characteristics: VCCQ = 1.8V–2.2V (Continued)
Parameter
Notes
VCC1:
2.7V–2.85V
VCC2:
2.7V–3.3V
Unit
Test Conditions
Min
Max
VIL Input Low Voltage
VIH Input High Voltage
–0.2
0.2
V
VCCQ –
V
0.2V
VOL Output Low Voltage
–0.10 0.10
V
VCC = VCCMin
VCCQ = VCCQMin
IOL = 100 µA
VOH Output High Voltage
VCCQ –
0.1V
V
VCC = VCCMin
VCCQ = VCCQMin
IOL = –100 µA
VPPLK
VPPH1
VPP Lock-Out Voltage
VPP during Program/
Erase Operations
3
1.5
V Complete Write Protection
3
2.7
2.85
V
VPPH2
3
2.7
3.3
V
VPPH3
3,6
11.4
12.6
V
VLKO1 VCC Program/Erase Lock
1.5
V
Voltage
VLKO2 VCCQ Program/Erase
1.2
V
Lock Voltage
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at nominal VCC, TA = +25°C.
2. ICCES and ICCWS are specified with device de-selected. If device is read while in erase suspend, current draw is ICCR. If the
device is read while in program suspend , current draw is ICCR.
3. Erases and Writes inhibited when VPP < VPPLK, and not guaranteed outside the valid VPP ranges of VPPH1,VPPH2. or VPPH3.
4. Sampled, not 100% tested.
5. Automatic Power Savings (APS) reduces ICCR to approximately standby levels in static operation (CMOS inputs).
6. Applying VPP = 11.4V–12.6V during program/erase can only be done for a maximum of 1000 cycles on the main blocks
and 2500 cycles on the parameter blocks. VPP may be connected to 12V for a total of 80 hours maximum. See Section 3.4
for details.
7 Includes the sum of VCC and VCCQ current
Table 14. Capacitance (TA = 25°C, f = 1 MHz)
Sym
Parameter
Notes Typ Max Units
Conditions
CIN Input Capacitance
1
6
8
pF VIN = 0V
COUT Output Capacitance
NOTE:
1. Sampled, not 100% tested.
1
10
12
pF VOUT = 0V
PRELIMINARY
37
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