GS82032 Просмотр технического описания (PDF) - Giga Semiconductor

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производитель

GS82032

64K x 32 2M Synchronous Burst SRAM

Giga Semiconductor 

GS82032AT/Q-180/166/133/100

Undershoot Measurement and Timing

VIH

VSS

50%

VSS – 2.0 V

20% tKC

Overshoot Measurement and Timing

VDD +- 2.0 V

50%

20% tKC

VDD

VIL

Capacitance

(TA = 25°C, f = 1 MHZ, VDD = 3.3 V)

Parameter

Symbol

Control Input Capacitance

Input Capacitance

Output Capacitance

Note: This parameter is sample tested.

CI

CIN

COUT

Test conditions

VDD = 3.3 V

VIN = 0 V

VOUT = 0 V

Typ. Max. Unit

3

4

pF

4

5

pF

6

7

pF

Package Thermal Characteristics

Rating

Layer Board Symbol TQFP Max QFP Max Unit Notes

Junction to Ambient (at 200 lfm)

single

RΘJA

40

TBD

°C/W 1,2,4

Junction to Ambient (at 200 lfm)

four

RΘJA

24

TBD

°C/W 1,2,4

Junction to Case (TOP)

RΘJC

9

TBD

°C/W

3,4

Notes:

1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-

ature air flow, board density, and PCB thermal resistance.

2. SCMI G-38-87

3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1

4. For x18 configuration, consult factory.

Rev: 1.09 7/2002

10/23

© 2000, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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