GS815018AB Просмотр технического описания (PDF) - Giga Semiconductor

Номер в каталоге

Компоненты Описание

производитель

GS815018AB

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

Giga Semiconductor 

Product Preview

GS815018/36AB-357/333/300/250

Absolute Maximum Ratings

(All voltages reference to VSS)

Symbol

Description

Value

Unit

VDD

Voltage on VDD Pins

–0.5 to 3.6

V

VDDQ

Voltage in VDDQ Pins

–0.5 to VDD

V

VI/O

Voltage on I/O Pins

–0.5 to VDDQ + 0.5 (≤ 3.6 V max.)

V

VIN

Voltage on Other Input Pins

–0.5 to VDDQ + 0.5 (≤ 3.6 V max.)

V

IIN

Input Current on Any Pin

+/–20

mA dc

IOUT

Output Current on Any I/O Pin

+/–20

mA dc

TJ

Maximum Junction Temperature

125

oC

TSTG

Storage Temperature

–55 to 125

ºC

Note:

Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended

Operating Conditions. Exposure to conditions exceeding the Recommended Operating Conditions, for an extended period of time, may affect

reliability of this component.

Recommended Operating Conditions

Power Supplies

Parameter

Symbol

Min.

Typ.

Max.

Unit Notes

Supply Voltage

VDD

2.3

2.5

2.7

V

Ambient Temperature

(Commercial Range Versions)

TA

0

25

70

°C

Ambient Temperature

(Industrial Range Versions)

TA

–40

25

85

°C

1

Note:

The part number of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted

are evaluated for worst case in the temperature range marked on the device.

Rev: 1.05 10/2005

7/25

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

© 2003, GSI Technology

Share Link: