HGT4E30N60B3DS(2001) Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
HGT4E30N60B3DS
(Rev.:2001)
(Rev.:2001)
Fairchild Semiconductor
HGT4E30N60B3DS Datasheet PDF : 8 Pages
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HGTG30N60B3D, HGT4E30N60B3DS
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
SYMBOL
td(ON)I
trI
td(OFF)I
tfI
EON
EOFF
VEC
trr
RθJC
TEST CONDITIONS
IGBT and Diode at TJ = 150oC,
ICE = IC110,
VCE = 0.8 BVCES,
VGE = 15V,
RG = 3Ω ,
L = 1mH,
Test Circuit (Figure 19)
IEC = 30A
IEC = 1A, dIEC/dt = 200A/µs
IEC = 30A, dIEC/dt = 200A/µs
IGBT
Diode
MIN
TYP
MAX UNITS
-
32
-
ns
-
24
-
ns
-
275
320
ns
-
90
150
ns
-
1300 1550
µJ
-
1600 1900
µJ
-
1.95
2.5
V
-
32
40
ns
-
45
55
ns
-
-
0.6
oC/W
-
-
1.3
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
60
VGE = 15V
50
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
225 TJ = 150oC, RG = 3Ω, VGE = 15V, L = 100µH
200
175
150
125
100
75
50
25
0
0
100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
©2001 Fairchild Semiconductor Corporation
HGTG30N60B3D, HGT4E30N60B3DS Rev. B1
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