FDH15N50 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDH15N50 Datasheet PDF : 6 Pages
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Typical Characteristics
30
25
20
15
TJ = 175oC
10
TJ = 25oC
5
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VSD, SOURCE TO DRAIN VOLTAGE (V)
Figure 7. Body Diode Forward Voltage vs Body
Diode Current
16
12
8
100
TC = 25oC
100µs
10
1ms
1.0
10ms
OPERATION IN THIS AREA
DC
LIMITED BY RDS(ON)
0.1
1
10
100
1000
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Maximum Safe Operating Area
50
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
STARTING TJ = 25oC
4
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
Figure 9. Maximum Drain Current vs Case
Temperature
STARTING TJ = 150oC
1
0.01
0.1
1
10
50
tAV, TIME IN AVALANCHE (ms)
Figure 10. Unclamped Inductive Switching
Capability
100
0.50
0.20
10-1 0.10
0.05
t1
PD
t2
0.02
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
0.01
SINGLE PULSE
10-210-5
10-4
10-3
10-2
10-1
100
101
t1, RECTANGULAR PULSE DURATION (s)
Figure 11. Normalized Transient Thermal Impedance, Junction to Case
©2003 Fairchild Semiconductor Corporation
FDH15N50 / FDP15N50 / FDB15N50 RevD2
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