FDH15N50 Просмотр технического описания (PDF) - Fairchild Semiconductor

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производитель

FDH15N50

15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET

Fairchild Semiconductor 

Typical Characteristics

100

TJ = 25oC

VGS DESCENDING

10V

6.5V

6V

5.5V

5V

4.5V

10

100

TJ = 175oC

VGS DESCENDING

10V

6V

5.5V

5V

4.5V

4V

10

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

1

1

10

100

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. Output Characteristics

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

1

1

10

100

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 2. Output Characteristics

60

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

50 VDD = 100V

40

30

TJ = 175oC

TJ = 25oC

20

10

0

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Transfer Characteristics

3.5

PULSE DURATION = 80µs

3.0 DUTY CYCLE = 0.5% MAX

2.5

2.0

1.5

1.0

VGS = 10V, ID = 7.5A

0.5

0

-50 -25 0

25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (oC)

Figure 4. Normalized Drain To Source On

Resistance vs Junction Temperature

4000

1000

100

CISS

COSS

15

ID = 15A

12

9

6

100V

250V

400V

CRSS

VGS = 0V, f = 1MHz

10

1

10

100

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 5. Capacitance vs Drain To Source

Voltage

3

0

0

10

20

30

40

50

Qg, GATE CHARGE (nC)

Figure 6. Gate Charge Waveforms For Constant

Gate Current

©2003 Fairchild Semiconductor Corporation

FDH15N50 / FDP15N50 / FDB15N50 RevD2

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