FSF9250R4 Просмотр технического описания (PDF) - Intersil
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FSF9250R4 Datasheet PDF : 8 Pages
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FSF9250D, FSF9250R
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
Forward Voltage
VSD
ISD = 15A
-0.6
-
Reverse Recovery Time
trr
ISD = 15A, dISD/dt = 100A/µs
-
-
Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Volts (Note 3)
BVDSS VGS = 0, ID = 1mA
-200
Gate to Source Threshold Volts (Note 3)
VGS(TH) VGS = VDS, ID = 1mA
-2.0
Gate to Body Leakage
(Notes 2, 3)
IGSS
VGS = ±20V, VDS = 0V
-
Zero Gate Leakage
(Note 3)
IDSS
VGS = 0, VDS = -160V
-
Drain to Source On-State Volts (Notes 1, 3)
VDS(ON) VGS = -12V, ID = 15A
-
Drain to Source On Resistance (Notes 1, 3)
rDS(ON)12 VGS = -12V, ID = 9A
-
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.
Single Event Effects (SEB, SEGR) (Note 4)
MAX
-1.8
300
MAX
-
-6.0
100
25
-4.57
0.290
TEST
SYMBOL
ENVIRONMENT (NOTE 5)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
APPLIED
VGS BIAS
(V)
Single Event Effects Safe Operating
SEESOA
Ni
26
43
20
Area
Br
37
36
5
Br
37
36
10
Br
37
36
15
Br
37
36
20
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
UNITS
V
ns
UNITS
V
V
nA
µA
V
Ω
(NOTE 6)
MAXIMUM
VDS BIAS
(V)
-200
-200
-160
-100
-40
Typical Performance Curves Unless Otherwise Specified
-200
-160
-120
-80
LET = 26MeV/mg/cm2, RANGE = 43µ
LET = 37MeV/mg/cm2, RANGE = 36µ
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
1E-3
1E-4
1E-5
1E-6
ILM = 10A
30A
100A
300A
-40
TEMP = 25oC
0
0
5
10
15
20
25
VGS (V)
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
1E-7
-10
-30
-100
-300
DRAIN SUPPLY (V)
-1000
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO IAS
3-217
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