ES3GB Просмотр технического описания (PDF) - Shenzhen Taychipst Electronic Co., Ltd
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ES3GB Datasheet PDF : 2 Pages
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SU R FA CE M O UNT R EC T IFIER
FEATURES
Low cost
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
ES3AB THRU ES3JB
50V-600V 3.0A
MECHANICAL DATA
Case:JEDEC DO-214AA,molded plastic
Terminals: Solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.007 ounces,0.21 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
@TA=55 ℃
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Peak Forward Voltage at 3.0A DC
Maximum DC Reverse Current
@TJ=25℃
at Rated DC Blocking Voltage
@TJ=100℃
Maximum Reverse Recovery Time(Note 1)
Typical Junction Capacitance (Note2)
Typical Thermal Resistance (Note3)
Operating Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
I(AV)
ES3AB
50
35
50
ES3BB
100
70
100
ES3DB
200
140
200
3.0
ES3GB
400
280
400
ES3JB
600
420
600
UNIT
V
V
V
A
IFSM
VF
IR
TRR
CJ
R JA
TJ
TSTG
125
0.95
1.25
1.70
5.0
100
35
70
45
20
-55 to +150
-55 to +150
A
V
μA
nS
pF
℃/W
℃
℃
NOTES: 1.Measured with IF=0.5A, IR=1A, IRR=0.25A
2.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
3.Thermal resistance junction to ambient.
E-mail: sales@taychipst.com
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Web Site: www.taychipst.com
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