TGA4953-EPU Просмотр технического описания (PDF) - TriQuint Semiconductor

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TGA4953-EPU

9.9-11.2Gb/s Optical Modulator Driver

TriQuint Semiconductor 

Advance Product Datasheet

TGA4953EPU

RF SPECIFICATION

(Continued)

Notes:

1/ Verified at package level RF test.

2/ Package RF Test Bias: Vd=5 V, adjust Vg1 to achieve Id=65 mA then adjust Vg2 to achieve

Id=200mA, Vctrl=+0.2 V

3/ Verified by design, SMT assembled onto a demonstration board detailed on sheet 6.

4/ Vin=250mV, Data Rate = 10.7Gb/s, VD1=VD2T or greater, VCTRL2 and VG2 are adjusted for maximum output.

5/ Computed using RSS Method where Jrms_additive = SQRT(Jrms_out2 - Jrms_in2)

6/ Verified at die level on-wafer probe.

7/ Power Bias Die Probe: Vtee=8 V, adjust Vg to achieve Id=175 mA+/-5%, Vctrl=1.5 V

Note: At the die level, drain bias is applied thru the RF output port using a bias tee, voltage

is at the DC input to the bias tee.

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process

specifications. Specifications are subject to change without notice.

TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com

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