EFC4612R-TR Просмотр технического описания (PDF) - ON Semiconductor

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EFC4612R-TR

N-Channel Power MOSFET 24V, 6A, 45mΩ, Dual EFCP

ON Semiconductor 

Ordering number : ENA1477B

EFC4612R

N-Channel Power MOSFET

24V, 6A, 45mΩ, Dual EFCP

http://onsemi.com

Features

• 2.5V drive

• Built-in gate protection resistor

• Best suited for LiB charging and discharging switch

• Common-drain type

• Halogen free compliance

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Source-to-Source Voltage

Gate-to-Source Voltage

Source Current (DC)

Source Current (Pulse)

Total Dissipation

Channel Temperature

Storage Temperature

Symbol

VSSS

VGSS

IS

ISP

PT

Tch

Tstg

Conditions

PW≤10μs, duty cycle≤1%

When mounted on ceramic substrate (5000mm2×0.8mm)

Ratings

Unit

24

V

±12

V

6

A

60

A

1.6

W

150

°C

--55 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions

unit : mm (typ)

7064-001

1.26

4

3

EFC4612R-TR

Product & Package Information

• Package

: EFCP

• JEITA, JEDEC

:-

• Minimum Packing Quantity : 5,000 pcs./reel

Taping Type : TR

Marking

1

2

TR

Electrical Connection

1

FN

LOT No.

0.65

1

2

4

3

0.3

1 : Source1

2 : Gate1

3 : Gate2

4 : Source2

EFCP1313-4CC-037

Rg

2

Rg

3

Rg=200Ω

4

Semiconductor Components Industries, LLC, 2013

July, 2013

O2412 TKIM/10511 TKIM/O0709PF TKIM TC-00001996 No. A1477-1/8

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