DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

DVR5V0W(2019) Просмотр технического описания (PDF) - Diodes Incorporated.

Номер в каталоге
Компоненты Описание
производитель
DVR5V0W
(Rev.:2019)
Diodes
Diodes Incorporated. Diodes
DVR5V0W Datasheet PDF : 6 Pages
1 2 3 4 5 6
Maximum Ratings, Total Device @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 5)
(Note 5)
Symbol
Pd
RϴJA
Tj, TSTG
Value
200
625
-55 to +150
Maximum Ratings, NPN Transistor @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (with Forced Air Cooling)
(Note 5)
Symbol
VCBO
VCEO
VEBO
IC
Value
45
18
5
1
Maximum Ratings, Zener Element @TA = 25°C unless otherwise specified
Forward Voltage
Characteristic
@ IF = 10mA
Symbol
VF
Value
0.9
Unit
mW
°C/W
°C
Unit
V
V
V
A
Unit
V
Electrical Characteristics, NPN Transistor @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Symbol Min Max Unit
Test Condition
V(BR)CBO 45
V IC = 100µA, IE = 0
V(BR)CEO 18
V IC = 1mA, IB = 0
V(BR)EBO
5
V IE = 100µA, IC = 0
ICBO
1
µA VCB = 40V, IE = 0
IEBO
1
µA VEB = 4V, IC = 0
hFE
150 800
VCE(SAT)
0.5
IC = 100mA, VCE = 1V
V IC = 300mA, IB = 30mA
Cobo
8
pF VCB = 10V, f = 1.0MHz, IE = 0
fT
100
MHz VCB = 10V, IE = 50mA, f = 100MHz
Electrical Characteristics, Zener Element @TA = 25°C unless otherwise specified
Zener Voltage Range
(Note 7)
Nom (V)
5.1
VZ @ IZT
Min (V)
4.85
Max (V)
5.36
IZT
mA
0.05
Maximum Reverse
Leakage Current
(Note 6)
IR @ VR
µA
V
5
3
Notes:
5. Part mounted on FR-4 substrate PC board, with 1 inch square, 2oz copper pad layout.
6. Short duration pulse test used to minimize self-heating effect.
7. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TT = 30°C ±1°C.
DVR5V0W
Document number: DS30578 Rev. 7 - 2
2 of 6
www.diodes.com
May 2019
© Diodes Incorporated

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]