DVR2V5W(Rev4-2) Просмотр технического описания (PDF) - Diodes Incorporated.
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DVR2V5W Datasheet PDF : 5 Pages
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Electrical Characteristics, NPN Transistor @ TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Symbol Min
V(BR)CBO
45
V(BR)CEO
18
V(BR)EBO
5
ICBO
¾
IEBO
¾
hFE
150
VCE(SAT)
¾
Cobo
¾
fT
100
Max
¾
¾
¾
1
1
800
0.5
8
¾
Unit
Test Condition
V
IC = 100mA, IE = 0
V
IC = 1mA, IB = 0
V
IE = 100mA, IC = 0
mA
VCB = 40V, IE = 0
mA
VEB = 4V, IC = 0
¾
IC = 100mA, VCE = 1V
V
IC = 300mA, IB = 30mA
pF
MHz
VCB = 10V, f = 1.0MHz, IE = 0
VCB = 10V, IE = 50mA,
f = 100MHz
Electrical Characteristics, Zener Element @ TA = 25°C unless otherwise specified
Type
Number
Zener Voltage Range (Note 5)
VZ @ IZT
IZT
Nom (V)
Min (V)
Max (V)
mA
DVR1V8W
3.3
3.1
3.5
5
DVR2V5W
3.9
3.7
4.1
5
DVR3V3W
4.7
4.4
5.0
5
DVR5V0W
5.1
4.85
5.36
0.05
Maximum Reverse
Leakage Current
IR @ VR
mA
V
5
1
3
1
3
2
5
3
Note: 4. Short duration test pulse used to minimize self-heating effect.
5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TT = 30°C ±1°C.
DS30578 Rev. 4 - 2
2 of 5
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DVR1V8W - DVR5V0W
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