DTC115TN3 Просмотр технического описания (PDF) - Cystech Electonics Corp.

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Компоненты Описание

производитель

DTC115TN3

NPN Digital Transistors (Built-in Resistors)

Cystech Electonics Corp. 

CYStech Electronics Corp.

Spec. No. : C358N3

Issued Date : 2004.03.09

Revised Date :

Page No. : 2/4

Electrical Characteristics (Ta=25°C)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Emitter-Base Cutoff Current

Collector-Emitter Saturation Voltage

DC Current Gain

Input Resistance

Transition Frequency

Symbol Min. Typ. Max. Unit

Test Conditions

VCBO 50 -

-

V IC=50µA

VCEO 50 -

-

V IC=1mA

VEBO

5

-

-

V IE=50µA

ICBO

-

- 0.5 µA VCB=50V

IEBO

-

- 0.5 µA VEB=4V

VCE(sat) -

- 0.3 V IC=1mA, IB=0.1mA

hFE 100 - 600 - VCE=5V, IC=1mA

R

70 100 130 kΩ -

fT

- 250 - MHz VCE=10V, IC=5mA, f=100MHz *

* Transition frequency of the device

Ordering Information

Device

DTC115TN3

Package

SOT-23

(Pb-free)

Shipping

3000 pcs / Tape & Reel

Marking

8U

DTC115TN3

CYStek Product Specification

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