DRF1200 Просмотр технического описания (PDF) - Microsemi Corporation

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DRF1200

MOSFET Driver Hybrid

Microsemi Corporation 

The Function (FN, pin 3) is the invert or non-invert select Pin, it is Internally held high.

FN (pin 3)*

HIGH

HIGH

LOW

LOW

Truth Table *Referenced to SG

IN (pin 4)*

HIGH

LOW

HIGH

LOW

MOSFET

ON

OFF

OFF

ON

DRF1200

Figure 2, DRF1200 Test Circuit

The Test Circuit illustrated above was used to evaluate the DRF1200 (available as an evaluation Board DRF12XX / EVALSW.) The input con-

trol signal is applied to the DRF1200 via IN(4) and SG(5) pins using RG188. This provides excellent noise immunity and control of the signal

ground currents.

The +VDD inputs (2,6) are by-passed (C1, C2, C4-C9), this is in addition to the internal by-passing mentioned previously. The capacitors used

for this function must be capable of supporting the RMS currents and frequency of the gate load. RL set for IDM at VDS max this load is used to

evaluate the output performance of the DRF1201.

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