DRF1200 Просмотр технического описания (PDF) - Microsemi Corporation

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DRF1200

MOSFET Driver Hybrid

Microsemi Corporation 

DRF1200

MOSFET Driver Hybrid

The DRF1200 hybrid includes a high power gate driver and the power

D

MOSFET. The driver output can be configured as Inverting and Non-

Inverting. It was designed to provide the system designer increased IN

flexibility and lowered cost over a non-integrated solution.

DRIVER 13A

MOSFET

S

1000V, 13A, 30MHz

FEATURES

• Switching Frequency: DC TO 30MHz

• Low Pulse Width Distortion

• Single Power Supply

• 1V CMOS Schmitt Trigger Input 1V

Hysteresis

• Inverting Non-Inverting Select

• RoHS Compliant

• Switching Speed 3-4ns

• BVds = 1Kv

• Ids = 13A Max

• Rds(on) ≤ 0.90 Ohm

• PD = 624W

Driver Absolute Maximum Ratings

Symbol

VDD

IN, FN

IO PK

TJMAX

Parameter

Supply Voltage

Input Single Voltages

Output Current Peak

Operating Temperature

Driver Specifications

Symbol

VDD

IN

Parameter

Supply Voltage

Input Voltage

IN(R)

IN(F)

IDDQ

IO

Ciss

RIN

VTH(on)

VTH(off)

TDLY

tr

tf

Input Voltage Rising Edge

Input Voltage Falling Edge

Quiescent Current

Output Current

Input Capacitance

Input Parallel Resistance

Input, Voltage Threshold Low (See truth table)

Input, Voltage Threshold High (See truth table)

Time Delay (throughput)

Rise Time

Fall Time

TYPICAL APPLICATIONS

• Class C, D and E RF Generators

• Switch Mode Power Amplifiers

• Pulse Generators

• Ultrasound Transducer Drivers

• Acoustic Optical Modulators

Min Typ

Max

Unit

15

V

-.7 to +5.5

8

A

175

°C

Min

Typ

Max Unit

10

15

V

3

5.5

3

ns

3

2

mA

8

A

3

1

MΩ

0.8

1.1

V

1.9

2.2

38

ns

7.5

ns

7.5

Microsemi Website - http://www.microsemi.com

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