DF005S(2013) Просмотр технического описания (PDF) - Vishay Semiconductors
Номер в каталоге
Компоненты Описание
производитель
DF005S
(Rev.:2013)
(Rev.:2013)
Vishay Semiconductors
DF005S Datasheet PDF : 4 Pages
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DF005S, DF01S, DF02S, DF04S, DF06S, DF08S, DF10S
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL DF005S DF01S DF02S DF04S
Typical thermal resistance (1)
RJA
40
RJL
15
Note
(1) Units mounted on PCB with 0.51" x 0.51" (13 mm x 13 mm) copper pads
DF06S
DF08S
DF10S
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
DF06S-E3/45
0.399
45
DF06S-E3/77
0.399
77
BASE QUANTITY
50
1500
DELIVERY MODE
Tube
13" diameter paper tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1.0
60 Hz
Resistive or
Inductive Load
0.5
P.C.B. Mounted on
0.51 x 0.51" (13 x 13 mm)
Copper Pads
0
20 40 60 80 100 120 140 160
Ambient Temperature (°C)
Fig. 1 - Derating Curve Output Rectified Current
10
1
0.1
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.01
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Forward Characteristics Per Diode
60
TJ = 150 °C
Single Sine-Wave
50
40
30
20
10
1.0 Cycle
0
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
100
10
TJ = 125 °C
1
0.1
TJ = 50 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Revision: 19-Aug-13
2
Document Number: 88573
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