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CY7C1316BV18(2004) Просмотр технического описания (PDF) - Cypress Semiconductor
Номер в каталоге
Компоненты Описание
производитель
CY7C1316BV18
(Rev.:2004)
18-Mbit DDR-II SRAM 2-Word Burst Architecture
Cypress Semiconductor
CY7C1316BV18 Datasheet PDF : 24 Pages
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Capacitance
[15]
C
IN
C
CLK
C
O
Parameter
PRELIMINARY
Description
Input Capacitance
Clock Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25
°
C, f = 1 MHz,
V
DD
= 1.8V
V
DDQ
= 1.5V
CY7C1316BV18
CY7C1916BV18
CY7C1318BV18
CY7C1320BV18
Max.
Unit
TBD
pF
TBD
pF
TBD
pF
AC Test Loads and Waveforms
V
REF
OUTPUT
Device
Under
Test
ZQ
(a)
0.75V
Z
0
= 50
Ω
RQ =
250
Ω
V
REF
R
L
= 50
Ω
V
REF
= 0.75V
OUTPUT
Device
Under
ZQ
Test
INCLUDING
JIG AND
SCOPE
V
REF
= 0.75V
0.75V
R = 50
Ω
RQ =
250
Ω
(b)
5 pF
0.25V
[14]
ALL INPUT PULSES
1.25V
0.75V
Slew Rate = 2V/ns
Document Number: 38-05621 Rev. **
Page 13 of 24
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