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Компоненты Описание
CXK77B3610GB Просмотр технического описания (PDF) - Sony Semiconductor
Номер в каталоге
Компоненты Описание
производитель
CXK77B3610GB
High Speed Bi-CMOS Synchronous Static RAM
Sony Semiconductor
CXK77B3610GB Datasheet PDF : 16 Pages
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Mode Select Truth Table
Item
Register-Resister mode
Register-Flow Thru mode
Register-Latch mode
M1
M2
L
H
L
L
H
L
CXK77B3610GB
Electrical Characteristics
• DC and operating characteristics
Item
Symbol
Input leakage current
I
LI
Output leakage current
I
LO
Operating power supply
current
I
CC
Standby current
I
SB
Output high voltage
V
OH
Output low voltage
V
OL
∗
V
CC
= 3.3V, Ta = 25°C
(V
CC
= 3.3V ± 10%, GND = 0V, Ta = 0 to 70°C)
Test conditions
Min. Typ.
∗
Max. Unit
V
IN
= GND to V
CC
–1
—
1
µA
V
O
= GND to V
CC
G = V
IH
–10
—
10
µA
Cycle = min.
Duty = 100%
I
OUT
= 0mA
—
—
TBD mA
ZZ
≥
V
IH
20
mA
I
OH
= –2.0mA
2.4
—
—
V
I
OL
= 2.0mA
—
—
0.4
V
• I/O capacitance
Item
Symbol
Test conditions
Input capacitance
C
IN
V
IN
= 0V
Clock input capacitance
C
CLK
V
IN
= 0V
Output capacitance
C
OUT
V
OUT
= 0V
Note)
These parameters are sampled and are not 100% tested.
(Ta = 25°C, f = 1MHz)
Min. Max. Unit
—
5
pF
—
8
pF
—
8
pF
–5–
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