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CUS02 Просмотр технического описания (PDF) - Toshiba

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CUS02 Datasheet PDF : 5 Pages
1 2 3 4 5
CUS02
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CUS02
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
Peak forward voltage: VFM = 0.45 V@IF = 0.7 A
Average forward current: IF (AV) = 1.0 A
Repetitive peak reverse voltage: VRRM = 30 V
Suitable for high-density board assembly due to the use of a small
surface-mount package, USFLATTM
1.25
+
0.2
0.1
0.88 ± 0.1
Unit: mm
0.13
+
0.05
0.03
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Repetitive peak reverse voltage
Average forward current
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature range
Symbol
VRRM
IF (AV)
IFSM
Tj
Tstg
Rating
Unit
30
V
1.0 (Note 1) A
20 (50 Hz) A
40 to 150
°C
40 to 150
°C
0.6 ± 0.1
0.6 ± 0.1
0.88 ± 0.1
ANODE
CATHODE
0.78 ± 0.1
Note 1:
Note 2:
Ta = 25°C: Device mounted on a glass-epoxy board
0.6 ± 0.1
Board size: 50 mm × 50 mm,
Land size: 6 mm × 6 mm
Rectangular waveform (α = 180°), VR = 15 V
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
JEITA
TOSHIBA
3-2B1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.004 g (typ.)
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Junction capacitance
Thermal resistance
(junction to ambient)
Thermal resistance (junction to lead)
Symbol
VFM (1)
VFM (2)
VFM (3)
IRRM (1)
IRRM (2)
Cj
Rth (j-a)
Rth (j-)
Test Condition
Min Typ. Max Unit
IFM = 0.1 A
IFM = 0.7 A
IFM = 1.0 A
VRRM = 5 V
VRRM = 30 V
VR = 10 V, f = 1.0 MHz
Device mounted on a ceramic board
(Board size: 50 mm × 50 mm ,
Land size: 2 mm × 2 mm)
Device mounted on a glass-epoxy
board
(Board size: 50 mm × 50 mm ,
Land size: 6 mm × 6 mm)
Junction to lead of cathode side
0.35
0.42 0.45
V
0.47
0.7
μA
10
100
40
pF
75
°C/W
150
30 °C/W
Start of commercial production
2001-12
1
2015-07-16

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