FDC2512 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDC2512 Datasheet PDF : 5 Pages
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February 2002
FDC2512
150V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
• DC/DC converter
Features
• 1.4 A, 150 V.
RDS(ON) = 425 mΩ @ VGS = 10 V
RDS(ON) = 475 mΩ @ VGS = 6 V
• High performance trench technology for extremely
low RDS(ON)
• Low gate charge (8nC typ)
• High power and current handling capability
• Fast switching speed
S
D
D
SuperSOT TM-6
G
DD
1
6
2
5
3
4
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.252
FDC2512
7’’
Ratings
150
± 20
1.4
8
1.6
0.8
−55 to +150
78
30
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2002 Fairchild Semiconductor Corporation
FDC2512 Rev B3 (W)
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