CHA7010(2002) Просмотр технического описания (PDF) - United Monolithic Semiconductors

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производитель

CHA7010
(Rev.:2002)

X-band GaInP HBT High Power Amplifier

United Monolithic Semiconductors 

X-band High Power Amplifier

Assembly recommendations

CHA7010

Vctr

C2

C1

C1

C1

C1

Vc

C2

Lbonding

Lbonding

Vctr

C1 C1

C1

C1

C2

C2

Vc

For thermal and electrical considerations, the chip should be brazed on a metal base

plate.

The RF, DC and modulation port inter-connections should be done according to the

following table:

Port

Connection

IN (1)

Inductance (Lbonding) = 0.4nH

OUT (13)

Inductance (Lbonding) = 0.4nH

Vc (6, 11, 15, 20))

Inductance ~ 1nH

Vctr (4, 9, 17, 22)

Inductance ~ 1nH

External capacitor

C1 ~ 100pF

C2 ~ 10nF

C1 ~ 100pF

Ref. : DSCHA70102175 -24-June-02

6/7

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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Specifications subject to change without notice

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