BZX55-C13 Просмотр технического описания (PDF) - Philips Electronics
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BZX55-C13 Datasheet PDF : 7 Pages
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BZX55-
CXXX
WORKING
VOLTAGE
VZ (V)
at IZtest
MIN. MAX.
DIFFERENTIAL
RESISTANCE
rdif (Ω)
at
at
IZ
IZtest
MAX. MAX.
TEMP. COEFF.
SZ (mV/K)
at IZtest
see Figs 5 and 6
TYP.
TEST
CURRENT
IZtest (mA)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
at VR = 0 V
MAX.
REVERSE CURRENT at
REVERSE VOLTAGE
IR (µA)
at
at
Tj = 25 °C Tj = 150 °C VR
(V)
MAX.
MAX.
22
20.8 23.3
220
55
18.7
24
22.8 25.6
220
80
20.4
27
25.1 28.9
220
80
22.9
30
28.0 32.0
220
80
27.0
33
31.0 35.0
220
80
29.7
36
34.0 38.0
220
80
32.4
39
37.0 41.0
500
90
35.1
43
40.0 46.0
600
90
38.7
47
44.0 50.0
700 110
44.0
51
48.0 54.0
700 125
49.0
56
52.0 60.0 1000 135
55.0
62
58.0 66.0 1000 150
62.0
68
64.0 72.0 1000 200
70.0
75
70.0 79.0 1500 250
78.0
5
60
0.1
2
16.5
5
55
0.1
2
18.0
5
50
0.1
2
20.25
5
50
0.1
2
22.25
5
45
0.1
2
24.75
5
45
0.1
2
27.0
2.5
45
0.1
2
29.25
2.5
40
0.1
2
32.25
2.5
40
0.1
2
35.25
2.5
40
0.1
2
38.25
2.5
40
0.1
2
42.0
2.5
35
0.1
2
46.5
2.5
35
0.1
2
51.0
2.5
35
0.1
2
56.25
Note
1. For BZX55-C2V4 up to C36 IZ = 1 mA; for C39 up to C75 IZ = 0.5 mA.
NON-REPETITIVE
PEAK REVERSE
CURRENT
IZSM (A)
at tp = 100 µs;
Tamb = 25 °C
MAX.
1.25
1.25
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
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