BZX399 Просмотр технического описания (PDF) - Philips Electronics
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BZX399 Datasheet PDF : 12 Pages
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Philips Semiconductors
Voltage regulator diodes
Product specification
BZX399 series
Table 1 Per type BZX399-C1V8 to C15
Tj = 25 °C unless otherwise specified.
BZX399-C
XXX
WORKING
VOLTAGE
VZ (V)
IZ = 50 µA
Tol. ±5%
VOLTAGE
CHANGE
∆VZ(V)
(note 1)
MIN. MAX.
MAX.
1V8
1.71 1.89
0.65
2V0
1.90 2.10
0.70
2V2
2.09 2.31
0.75
2V4
2.28 2.52
0.80
2V7
2.57 2.84
0.85
3V0
2.85 3.15
0.90
3V3
3.14 3.47
0.93
3V6
3.42 3.78
0.95
3V9
3.71 4.10
0.97
4V3
4.09 4.52
0.99
4V7
4.47 4.94
0.97
5V1
4.85 5.36
0.60
5V6
5.32 5.88
0.20
6V2
5.89 6.51
0.10
6V8
6.46 7.14
0.10
7V5
7.13 7.88
0.15
8V2
7.79 8.61
0.15
9V1
8.65 9.56
0.10
10
9.50 10.50
0.10
11
10.45 11.55
0.11
12
11.40 12.60
0.12
13
12.35 13.65
0.13
15
14.25 15.75
0.15
Note
1. ∆VZ = VZ at 100 µA minus VZ at 10 µA.
TEMP. COEFF.
SZ (mV/K)
IZ = 50 µA
(see Figs 2, 3 and 4)
TYP.
−0.85
−0.95
−1.05
−1.15
−1.35
−1.50
−1.65
−1.80
−1.95
−2.05
−1.90
0.15
1.75
2.35
3.00
3.60
4.25
5.00
5.80
6.70
7.65
8.60
10.50
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
MAX.
425
410
390
370
350
325
310
300
290
280
275
300
275
250
215
170
150
120
110
110
105
105
100
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A) at tp = 100 µs;
Tamb = 25 °C
MAX.
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
5.0
4.0
3.0
3.0
3.0
3.0
3.0
3.0
2.5
2.5
2.5
2.0
1999 Jun 04
4
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