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BYV32200M

HERMETICALLY SEALED DUAL FAST RECOVERY SILICON RECTIFIER FOR HI–REL APPLICATIONS

Semelab - > TT Electronics plc  

BYV32–50M0

BYV32–100M

BYV32–150M

BYV32–200M

ELECTRICAL CHARACTERISTICS (Per Diode) (Tcase = 25°C unless otherwise stated)

Parameter

Test Conditions

Min. Typ.

IR

Reverse Current

VF *

Forward Voltage

trr

Reverse Recovery Time

VR = VRWM

VR = VRWM

IF = 8A

IF = 20A

IF = 5A

IF = 2A

di / dt = 20A/ms

IF = 1A

di / dt = 50A/ms

Tj = 25°C

Tj = 100°C

TC = 25°C

TC = 25°C

TC = 100°C

VR = 30V

VR = 30V

Qrr

Recovered Charge

IF = 2A

di / dt = 20A/ms

VR = 30V

VFP

Forward Recovery Overvoltage di / dt = 10A/ms IF = 1A

1.0

* Pulse Test: tp £ 300ms, duty cycle £ 2%.

Max.

30

0.6

1.1

1.5

0.95

35

50

15

Unit

mA

mA

V

ns

ns

nC

V

THERMAL CHARACTERISTICS (TO220 METAL CASE)

RqJC†

Thermal Resistance Junction – Case

† Both diodes conducting.

1.6

°C/W

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim. 7/00

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