Philips Semiconductors
Breakover diodes
Product specification
BRS212 series
10 IS / A
1
max
typ
0.1
0.01
min
0.001
-50
0
50
100
150
Tj / C
Fig.7. Switching current as a function of junction
temperature.
10 IH / A
1
min
0.1
0.01
0.001
-50
0
50
100
150
Tj / C
Fig.8. Minimum holding current as a function of
temperature.
Cj / pF
100
typ
10
BR211-140
BR211-280
1
1
10
100
1000
VD / V
Fig.9. Typical junction capacitance as a function of
off-state voltage, f = 1 MHz; Tj = 25˚C.
1000Zth / (K/W)
BR211
100
10
1
PD tp
0.110us
1ms
0.1s
t
10s
1000s
tp / s
Fig.10. Transient thermal impedance. Zth j-a = f(tp).
January 1997
4
Rev 1.000