BRS212-160 Просмотр технического описания (PDF) - Philips Electronics
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BRS212-160 Datasheet PDF : 6 Pages
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Philips Semiconductors
Breakover diodes
Product specification
BRS212 series
current VT
IT
IH
ID
V(BR)
I(BR)
IS
V(BO)
VD voltage
Symbol
Symmetric BOD
Fig.1. Definition of breakover diode characteristics.
current
100%
I PP
90%
50%
30%
0
time
5us
310us
Fig.2. Test waveform for high voltage impulse (IPP)
according to CCITT vol IX-Rec K17.
20 ITSM / A
15
10
BR211
I
ITSM
time
5
01
10
100
1000
10000
Number of impulses
Fig.3. Maximum permissible non-repetitive on-state
current based on sinusoidal currents; f = 50 Hz;
device triggered at the start of each pulse; Tj = 70˚C
prior to surge.
V(BR)(Tj)
1.06 V(BR)(25 C)
1.04
1.02
1.00
0.98
0.96
0.94
0.92
0.90
-40 -20 0 20 40 60 80 100
Tj / C
Fig.4. Normalised avalanche breakdown voltage V(BR)
and V(BO) as a function of temperature.
20 IT / A
Tj = 25 C
Tj = 150 C
15
10
typ
max
5
0
1
2
3
4
VT / V
Fig.5. On-state current as a function of on-state
voltage; tp = 200 µs to avoid excessive dissipation.
100 ID / uA
10
max
1
0.1
-40 -20 0
20 40 60 80 100
Tj / C
Fig.6. Maximum off-state current as a function of
temperature.
January 1997
3
Rev 1.000
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