BRS212 Просмотр технического описания (PDF) - Philips Electronics
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BRS212 Datasheet PDF : 6 Pages
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Philips Semiconductors
Breakover diodes
Product specification
BRS212 series
THERMAL RESISTANCES
SYMBOL
Rth j-sp
Rth j-a
Zth j-a
PARAMETER
Thermal resistance junction to
solder point
Thermal resistance junction to
ambient
Thermal impedance junction to
ambient
CONDITIONS
pcb mounted; minimum footprint
tp = 1 ms
MIN. TYP. MAX. UNIT
-
-
25 K/W
- 100 - K/W
-
2.6
- K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
TYPE
PARAMETER
Marking
Avalanche
voltage
Conditions
Symbol
Limits
Units
BRS212-140
BRS212-160
BRS212-180
BRS212-200
BRS212-220
BRS212-240
BRS212-260
BRS212-280
212-140
212-160
212-180
212-200
212-220
212-240
212-260
212-280
IBR = 10 mA
VBR
min
typ
V
V
123
140
140
160
158
180
176
200
193
220
211
240
228
260
246
280
Breakover
voltage
ID ≤ IS
tp = 100 µs
VBO
typ
max
V
V
140
157
160
180
180
202
200
224
220
247
240
269
260
292
280
314
Off-state current
Tj = 70˚C;
RH ≤ 65%
ID @ VD
max
µA
V
10
105
10
120
10
135
10
150
10
165
10
180
10
195
10
210
Critical rate of
rise of off-state
voltage
Tj = 70˚C
dVD/dt @ VDM
max
V/µs
V
2000 105
2000 120
2000 135
2000 150
2000 165
2000 180
2000 195
2000 210
SYMBOL
VT
IH
IS
S(BR)
Cj
PARAMETER
On-state voltage
Holding current1
Switching current2
Temperature coefficient of
avalanche voltage
Junction capacitance
CONDITIONS
ITM = 2 A; tp = 200 µs
Tj = 25˚C
Tj = 70˚C
tp = 100 µs
VD = 0 V, f = 1 kHz to 1 MHz
MIN.
-
150
100
10
-
TYP.
-
-
-
200
+0.1
MAX.
2.5
-
-
1000
-
UNIT
V
mA
mA
mA
%/K
-
- 100 pF
1 The minimum current at which the diode will remain in the on-state
2 The avalanche current required to switch the diode to the on-state.
January 1997
2
Rev 1.000
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