BGA416(2002) Просмотр технического описания (PDF) - Infineon Technologies

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производитель

BGA416
(Rev.:2002)

RF Cascode Amplifier

Infineon Technologies 

BGA416

Maximum Ratings

Parameter

Voltage at pin RFout

Current into pin RFin

Device current 1)

Input power

Total power dissipation, TS < 123°C 2)

Junction temperature

Ambient temperature range

Storage temperature range

Thermal resistance: junction-soldering point

Symbol

VOUT

IIN

ID

PIN

Ptot

Tj

TA

TSTG

Rth JS

Notes:

All Voltages refer to GND-Node

1) Device current is equal to current into pin RFout

2) TS is measured on the ground lead at the soldering point

Value

6

0.5

20

8

100

150

-65 ... +150

-65 ... +150

270

Unit

V

mA

mA

dBm

mW

°C

°C

°C

K/W

Electrical Characteristics at TA=25°C (measured in test circuit specified in fig. 1)

VCC=3V, unless otherwise specified

Parameter

Symbol min. typ. max. Unit

Maximum available power gain f=0.9GHz GMA

f=1.8GHz

23

dB

14

Insertion power gain

f=0.9GHz |S21|2

17

dB

f=1.8GHz

11

Reverse isolation

f=0.9GHz |S12|

62

dB

f=1.8GHz

40

Noise figure (ZS=50Ω)

f=0.9GHz F50Ω

f=1.8GHz

1.3

dB

1.6

Output power at 1dB gain compression

(ZS=ZL=50Ω)

f=0.9GHz

f=1.8GHz

P-1dB

dBm

-3

-3

Output third order intercept point

(ZS=ZL=50Ω)

f=0.9GHz

f=1.8GHz

OIP3

dBm

14

14

Device current

ID

5.5

mA

Data sheet

5

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