BFQ621 Просмотр технического описания (PDF) - Philips Electronics
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BFQ621 Datasheet PDF : 10 Pages
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Philips Semiconductors
NPN 7 GHz wideband transistor
Product specification
BFQ621
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
up to Tmb = 25 °C
MIN.
−
−
−
−
−
−65
−
MAX.
25
16
2
150
8
+175
+200
UNIT
V
V
V
mA
W
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-mb thermal resistance from junction to mounting base Ptot = 8 W; up to Tmb = 25 °C
VALUE
21.9
UNIT
K/W
1995 Sep 26
3
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