BC858W Просмотр технического описания (PDF) - PANJIT INTERNATIONAL
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производитель
BC858W Datasheet PDF : 4 Pages
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BC856AW ~ BC859CW
THERMAL CHARACTERISTICS
Thermal Resistance
PARAMETER
SYMBOL
RθJA
RθJC
Value
400
100
UNIT
OC/W
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
ELECTRICAL CHARACTERISTICS (TJ=25OC, unless otherwise noted)
PARAMETER
Collector - Emitter Breakdown Voltage
(IC=-1 0 mA , IB=0 )
Collector - Base Breakdown Voltage
(IC=-1 0μA , IE=0 )
BC 856AW,BW
BC 857AW/BW/C W,
BC 858AW/BW/C W,BC 859BW/C W
BC 856AW,BW
BC 857AW/BW/C W,
BC 858AW/BW/C W,BC 859BW/C W
S ymbol
V (BR)C E O
V (BR)C B O
MIN.
-65
-45
-30
-80
-50
-30
TYP. MA X . Uni ts
-
-
V
-
-
V
Emitter-Base Breakdown Voltage
(IE=-1 uA , IC=0 )
Emitter-Base Cutoff Current
(V =-5V)
EB
Collector-Base Cutoff Current
(V CB=-3 0 V, IE=0 )
DC Current Gain
(IC=-1 0μA , V CE=-5 V )
DC Current Gain
(IC=-2 .0 mA , V CE=-5 V )
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
Base - Emitter Voltage
Collector - Base Capacitance
Current-Gain-Bandwidth Product
(I =-10mA, V =-5.0V,f=100MH )
C
CE
Z
V(BR)EBO -5.0
-
-
V
IE B O
-
-
-100
nA
TJ=2 5 OC
TJ= 1 5 0 OC
IC B O
-
-
-15
nA
-4.0
μA
BC856~BC858 Suffix "AW"
BC856~BC859 Suffix "BW"
BC857~BC859 Suffix "CW"
90
hFE
-
150
-
-
270
BC856~BC858 Suffix "AW"
BC856~BC859 Suffix "BW"
BC857~BC859 Suffix "CW"
110 180 220
hFE
200 290 450
-
420 520 800
( IC=-1 0 m A , IB=- 0 .5 m A )
( IC=-1 0 0 m A , IB=- 5 .0 m A )
( IC=-1 0 m A , IB=- 0 .5 m A )
( IC=-1 0 0 m A , IB=- 5 .0 m A )
( IC=-2 m A , V CE=-5 .0 V )
( IC=-1 0 m A , V CE=-5 .0 V )
V CE(SAT)
-
-
-
-
-0.3
-0.65
V
V BE(SAT)
-
-
-0.7
-0.9
-
-
V
V BE(ON)
-0.60
-
-
-
-0.75
-0.82
V
( V CB=-1 0 V, IE=0 , f=1 M HZ)
C CB
-
-
4.5
pF
F.
-
200
-
MHZ
December 17,2010-REV.00
PAGE . 2
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