BAP63-02 Просмотр технического описания (PDF) - TY Semiconductor

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Компоненты Описание

производитель

BAP63-02

Silicon PIN diode

TY Semiconductor 

Product specification

BAP63-02

Electrical Characteristics Ta = 25

Parameter

Symbol

Conditions

Typ

Max

Unit

forward voltage

VF

IF = 50 mA

0.95

1.1

V

reverse leakage current

IR

VR = 35 V

10

nA

VR = 0; f = 1 MHz

0.36

diode capacitance

Cd

VR = 1 V; f = 1 MHz

0.32

pF

VR = 20V; f = 1 MHz

0.25

0.32

IF = 0.5 mA; f = 100 MHz; note 1

2.5

3.5

IF = 1 mA; f = 100 MHz; note 1

1.95

3

diode forward resistance

rD

IF = 10 mA; f = 100 MHz; note 1

1.17

1.8

IF = 100 mA; f = 100 MHz; note 1

0.9

1.5

isolation

VR = 0; f = 900 MHz

15.6

|s21|2

VR = 0; f = 1800 MHz

10.3

dB

VR = 0; f = 2450 MHz

8.3

insertion loss

VR = 0.5; f = 900 MHz

0.19

|s21|2

VR = 0.5; f = 1800 MHz

0.24

dB

VR = 0.5; f = 2450 MHz

0.28

insertion loss

VR = 1; f = 900 MHz

0.16

|s21|2

VR = 1; f = 1800 MHz

0.20

dB

VR = 1; f = 2450 MHz

0.25

insertion loss

VR = 10; f = 900 MHz

0.10

|s21|2

VR = 10; f = 1800 MHz

0.16

dB

VR = 10; f = 2450 MHz

0.20

insertion loss

VR = 100; f = 900 MHz

0.09

|s21|2

VR = 100; f = 1800 MHz

0.14

dB

VR = 100; f = 2450 MHz

0.18

when switched from IF = 10 mA to IR = 6 mA;

charge carrier life time

L

310

s

RL = 100 ;measured at IR = 3 mA

series inductance

LS

IF = 100 mA; f = 100 MHz

0.6

nH

Note

1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.

Marking

Marking

K5

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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