BA44W12SAT Просмотр технического описания (PDF) - ROHM Semiconductor
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BA44W12SAT Datasheet PDF : 9 Pages
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Regulator ICs
BA44W12SAT
(9) Recommended to put diode for protection in case of output pin connected with large load of impedance or reserve
current occurred at initial and output off.
(Example)
Output
(10) When used within a strong magnetic field, be aware that there is a slight possibility of malfunction.
(11) We are confident in recommending the above application circuit example, but we ask that you carefully check the
characteristics of this circuit before using it. If using circuit after modifying other external circuit constants, be careful to
ensure adequate margins for variation between external devices and this IC, including not only static characteristics
but also transient characteristics.
This IC is a bipolar IC which (as shown in Figure 9) has P+ isolation in the P substrate and between the various pins.
A P-N junction is formed form this P layer and the N layer of each pin. For example the relation between each
potentials is as follows,
(When GND > PinB and GND > PinA, the P-N junction operates as a parasitic diode.)
(When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.)
Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits as well as operation faults and physical damage. Accordingly, you must not use methods
by which parasitic diodes operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an
input pin.
(Pin A)
Resistance
(Pin B) C
Transistor (NPN)
B
E
P+
N
P
N
P+
N
P substrate Parasitic diode
GND
(Pin A)
Parasitic diode
GND
P+
N
N
P
N
P substrate
Parasitic diode or
transistor
(Pin B)
GND
GND
P+
N
C
B
E
GND
Parasitic diode
or transistor
Fig.9 Simplified structure of bipolar IC
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