AT28BV16 Просмотр технического описания (PDF) - Atmel Corporation
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Компоненты Описание
производитель
AT28BV16 Datasheet PDF : 12 Pages
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Features
• 2.7 to 3.6V Supply
– Full Read and Write Operation
• Low Power Dissipation
– 8 mA Active Current
– 50 µA CMOS Standby Current
• Read Access Time - 250 ns
• Byte Write - 3 ms
• Direct Microprocessor Control
– DATA Polling
– READ/BUSY Open Drain Output on TSOP
• High Reliability CMOS Technology
– Endurance: 100,000 Cycles
– Data Retention: 10 Years
• Low Voltage CMOS Compatible Inputs and Outputs
• JEDEC Approved Byte Wide Pinout
• Commercial and Industrial Temperature Ranges
Description
The AT28BV16 is a low-power, high-performance Electrically Erasable and Program-
mable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory
organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable
nonvolatile CMOS technology.
(continued)
16K (2K x 8)
Battery-Voltage™
Parallel
EEPROMs
AT28BV16
Pin Configurations
Pin Name
A0 - A10
CE
OE
WE
I/O0 - I/O7
RDY/BUSY
NC
DC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
Ready/Busy Output
No Connect
Don’t Connect
OE 1
NC 2
A9 3
A8 4
NC 5
WE 6
VCC 7
RDY/BUSY 8
NC 9
A7 10
A6 11
A5 12
A4 13
A3 14
TSOP
Top View
28 A10
27 CE
26 I/O7
25 I/O6
24 I/O5
23 I/O4
22 I/O3
21 GND
20 I/O2
19 I/O1
18 I/O0
17 A0
16 A1
15 A2
PDIP, SOIC
Top View
A7 1
A6 2
A5 3
A4 4
A3 5
A2 6
A1 7
A0 8
I/O0 9
I/O1 10
I/O2 11
GND 12
24 VCC
23 A8
22 A9
21 WE
20 OE
19 A10
18 CE
17 I/O7
16 I/O6
15 I/O5
14 I/O4
13 I/O3
PLCC
Top View
A6 5
A5 6
A4 7
A3 8
A2 9
A1 10
A0 11
NC 12
I/O0 13
29 A8
28 A9
27 NC
26 NC
25 OE
24 A10
23 CE
22 I/O7
21 I/O6
Rev. 0380B–10/98
1
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