4C4M4EOQ-50TC Просмотр технического описания (PDF) - Alliance Semiconductor
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4C4M4EOQ-50TC Datasheet PDF : 16 Pages
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Write cycle
Symbol Parameter
tWCS
tWCH
tWP
tRWL
tCWL
tDS
tDH
Write command setup time
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data-in setup time
Data-in hold time
Read-modify-write cycle
Symbol Parameter
tRWC
tRWD
tCWD
tAWD
Read-write cycle time
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time
Refresh cycle
Symbol Parameter
tCSR CAS setup time (CAS-before-RAS)
tCHR CAS hold time (CAS-before-RAS)
tRPC RAS precharge to CAS hold time
tCPT
CAS precharge time
(CBR counter test)
®
-50
Min
Max
0
–
10
–
10
–
10
–
8
–
0
–
8
–
-50
Min
Max
113
–
67
–
32
–
42
–
-50
Min
Max
5
–
8
–
0
–
10
-60
Min
Max
0
–
10
–
10
–
10
–
10
–
0
–
10
–
-60
Min
Max
135
–
77
–
35
–
47
–
-60
Min
Max
5
–
10
–
0
–
10
–
AS4C4M4EOQ
AS4C4M4E1Q
Unit Notes
ns
11
ns
11
ns
ns
ns
ns
12
ns
12
Unit Notes
ns
ns
11
ns
11
ns
11
Unit Notes
ns 3
ns 3
ns
ns
3/22/01; v.1.0
Alliance Semiconductor
P. 7 of 16
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