4C4M4EOQ-50TC Просмотр технического описания (PDF) - Alliance Semiconductor
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4C4M4EOQ-50TC Datasheet PDF : 16 Pages
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®
Absolute maximum ratings
Parameter
Input voltage
Input voltage (DQs)
Power supply voltage
Storage temperature (plastic)
Soldering temperature × time
Power dissipation
Short circuit output current
Symbol
Min
Vin
-1.0
VDQ
-1.0
VCC
-1.0
TSTG
-55
TSOLDER
–
PD
–
Iout
–
DC electrical characteristics (AS4C4M4E0/E1)
Parameter
Symbol Test conditions
Input leakage current IIL
0V ≤ Vin ≤ +5.5V,
Pins not under test = 0V
Output leakage current IOL
Operating power
supply current
ICC1
TTL standby power
supply current
ICC2
DOUT disabled, 0V ≤ Vout ≤ +5.5V
RAS, UCAS, LCAS, Address cycling;
tRC=min
RAS = UCAS = LCAS ≥ VIH
Average power supply
current, RAS refresh ICC3
mode or CBR
RAS cycling, UCAS = LCAS ≥ VIH,
tRC = min of RAS low after XCAS
low.
EDO page mode
average power supply ICC4
current
RAS = VIL, UCAS or LCAS,
address cycling: tHPC = min
CMOS standby power
supply current
ICC5
RAS = UCAS = LCAS = VCC - 0.2V
Output voltage
VOH
VOL
CAS before RAS refresh
current
ICC6
IOUT = -5.0 mA
IOUT = 4.2 mA
RAS, UCAS or LCAS cycling, tRC =
min
Self refresh current ICC7
RAS = UCAS = LCAS ≤ 0.2V,
WE = OE ≥ VCC - 0.2V,
all other inputs at 0.2V or
VCC - 0.2V
-50
Min Max
-5 +5
-5 +5
– 110
– 2.0
– 110
–
90
–
1.0
2.4 –
– 0.4
– 110
– 0.6
AS4C4M4EOQ
AS4C4M4E1Q
Max
+7.0
VCC + 0.5
+7.0
+150
260 × 10
1
50
Unit
V
V
V
°C
oC × sec
W
mA
-60
Min Max Unit Notes
-5 +5 µA
-5 +5 µA
–
100 mA
1,2
–
2.0 mA
–
100 mA
1
–
80 mA 1, 2
–
1.0 mA
2.4
–
V
–
0.4
V
–
100 mA
–
0.6 mA
3/22/01; v.1.0
Alliance Semiconductor
P. 4 of 16
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