Micropower Voltage Reference
AS1004
Electrical Characteristics
Electrical Characteristics are guaranteed over full junction temperature range (0 to 70° C). Ambient temperature must be derated based
on power dissipation and package thermal characteristics.
Parameter
Symbol
Reverse Breakdown Voltage VZ
Average Temperature
Coefficient
∆VZ /∆T
Minimum Operating Current IZ (min)
Reverse Breakdown Voltage ∆VZ /∆IZ
Change With Current
Reverse Dynamic Impedance ZZ
Wide Band Noise
Long Term Stability
en
∆VZ /∆T
Test Condition
IZ = 100 µA, TJ = 25° C
0° C ≤ TA ≤ 70° C
Imin ≤ IZ ≤ 20 mA
Imin ≤ IZ ≤ 1 mA
Over Temperature
1 mA ≤ IZ ≤ 20 mA
Over Temperature
IZ = 100 mA, f = 25 Hz
Over Temperature
IZ = 100 µA
10 Hz ≤ f ≤ 10 KHz
IZ = 100 µA
TA = 25° C ± 0.1° C
AS1004-1.2
Min Typ Max
1.231 1.235 1.239
1.225 1.235 1.245
20
AS1004-2.5
Min Typ Max Unit
2.480 2.500 2.520 V
2.470
2.500
60
2.530 V
ppm/°C
4
10
0.5 1
0.5 1.5
6.5 10
6.5 20
0.2 0.6
1 1.5
12
20
µA
0.5
1
mV
0.5 1.5 mV
6.5
10
mV
6.5
20
mV
0.8 0.9
Ω
1.5
Ω
60
60
µV
20
60
ppm/kH
Typical Performance Curves
Calculating Average Temperature
Coefficient for the AS1004-1.2 Reference
00 0
-5
5000 0.5
∆VREF
∆T
AS1004-1.2 Reference Voltage vs.
Ambient Temperature
1.245
IZ = 100 µA
1.240
1.235
-10
0
10 20 30 40 50 60 70
Temperature (°C)
0.025 mV/ °C
0.002 %/ °C
20 ppm/ °C
Average Temperature Coefficient =
∆VREF
∆T
Figure 1
ASTEC Semiconductor
1.230
1.225
–55 –35
–15 5 25 45 65 85
TA – Ambient Temperature (°C)
Figure 2
105 125
31